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| QIC0610001 Powerex Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Dual Common Emitter IGBT Module 100A 600V Per Switch Description: Powerex Dual Common Emitter IGBT Power Module features two common emitter IGBT's. Features: * * * * * * Two switches - each capable of 100Amps Isolated Mounting Low Drive Requirement Internal Series Gate Resistors Isolation Material - DBC Alumina Baseplate Materal - Copper Schematic: 1 6 7 5 4 3 Dim A B C D E F G Inches Min. 3.681 3.145 1.329 1.28 1.161 0.940 0.901 Inches Max 3.721 3.155 1.349 1.32 1.201 0.95 0.911 Millimeters Min 93.50 79.88 33.76 32.51 29.49 23.88 22.88 Millimeters Max 94.51 80.14 34.26 33.53 30.51 24.13 23.14 Dim K L M N P Q S Inches Min. 0.61 0.502 0.46 0.403 0.305 0.251 --Inches Max 0.65 0.522 0.48 0.423 0.325 0.261 --Millimeters Min 15.49 12.75 11.68 10.24 7.75 6.38 M6 x 0.8 Millimeter Max 16.51 13.26 12.19 10.74 8.26 6.63 M6 x 0.8 2 Preliminary Page 1 3/13/98 QIC0610001 Powerex Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Dual Common Emitter IGBT Module 100A 600V Per Switch Electrical Charactistics of Each Switch (2 switches per module) Part IGBT (each Switch) (2 Switches/Module) Symbol Vces Vges Rth(j-c) Parameter Collector Emitter Voltage Vge=0 Gate Emitter Voltage Vce=0 Thermal Impedance Junction to case Quantity of IGBT Die 10mm x 10mm per switch Peak Reverse Blocking Voltage Reverse recovery time Reverse Recovery charge Thermal Impedance Junction to case Quantity of Diode Die 10mm x 10mm per switch V Isolation Module weight Max. Mounting torque M6 Mounting screw Max. Terminal torque, M6 Terminal Screw Units 600 V 20 V 0.31 C/W 1 1000 V TBD TBD 0.31 C/W 1 2000 V 500 g 6 Nm 6 Nm Diode (each Switch) (2 Switches/Module) Vrrm trr Qrr Rth(j-c) Package Vrms 600V, 100A IGBT Element Vcesat (Typical) 5.00 4.00 IGBT Vcesat (V) 3.00 2.00 25C 125C 1.00 0.00 0 25 50 75 100 125 150 175 200 MODULE CURRENT (A) Preliminary Page 2 3/13/98 |
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